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HARVARD Citation
Zhang 张, Y. et al. (n.d.). High current gain 4H-SiC bipolar junction transistor*Project supported by the National Natural Science Foundation of China (Nos. 61306093, 61401075).. Journal of semiconductors. p. . [Online].
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Zhang 张, Y. et al. (n.d.). High current gain 4H-SiC bipolar junction transistor*Project supported by the National Natural Science Foundation of China (Nos. 61306093, 61401075).. Journal of semiconductors. p. . [Online].