Transmittance jump in a thin aluminium layer during laser ablation. (1st March 2016)

• Record Type: Journal Article
• Authors: Bykovsky, N E; Pershin, S M; Samokhin, A A; Senatsky, Yu V
• Is Part Of: Quantum electronics. Volume 46:Number 2(2016)
• Page Start: 128
• Page End: 132
• Publication Date: 2016-03-01
• Subjects: Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL15971
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: A jump in the transmittance (from ∼0.1% to ∼50% for ∼1 ns) of an optical gate on a Mylar film (a thin aluminium layer on a Lavsan substrate) irradiated by nanosecond (10 -7 – 10 -8 s) pulses of a neodymium laser with an intensity up to 0.1 GW cm -2 has been recorded. The mechanism of a fast (10 -10 – 10 -11 s) increase in the transmittance of the aluminium layer upon its overheating (without boiling) to the metal – insulator phase-transition temperature is discussed.