Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes. Issue 3 (1st August 2016)

• Record Type: Journal Article
• Authors: Drabczyk, Kazimierz; Wróbel, Edyta; Kulesza-Matlak, Grazyna; Filipowski, Wojciech; Waczynski, Krzysztof; Lipinski, Marek
• Is Part Of: Microelectronics international. Volume 33:Issue 3(2016)
• Page Start: 167
• Page End: 171
• Publication Date: 2016-08-01
• Subjects: Screen printing -- Front electrodes -- Diffusion process -- Dopant sources -- Silicon solar cells; Microelectronics -- Periodicals; 621.381
• DOI: 10.1108/MI-03-2016-0031
• Languages: English
• ISSNs: 1356-5362

Abstract

Abstract : Purpose: The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The diffusion process in diffusion furnace with quartz tube is slow, complicated and requires expensive equipment. The alternative for this technology is very fast in-line processing using the belt furnaces as an equipment. This approach requires different dopant sources. Design/methodology/approach: In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. The investigation was focused on dopant sources fabrication and diffusion processes. The doping solution was made in two stages. In the first stage, a base solution (without dopants) was made: dropwise deionized (DI) water and ethyl alcohol were added to a solution consisting of tetraethoxysilane (TEOS) and 99.8 per cent ethyl alcohol. Next, to the base solution, orthophosphoric acid dissolved in ethyl alcohol was added. Findings: Diffused emitter layers with sheet resistance around 60 Ω/sq were produced on solar grade monocrystalline silicon wafers using two types of dopant sources. Originality/value: In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution.