Plasma-free Dry-chemical Texturing Process for High-efficiency Multicrystalline Silicon Solar Cells. (August 2016)

• Record Type: Journal Article
• Authors: Kafle, Bishal; Freund, Timo; Mannan, Abdul; Clochard, Laurent; Duffy, Edward; Werner, Sabrina; Saint-Cast, Pierre; Hofmann, Marc; Rentsch, Jochen; Preu, Ralf
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 359
• Page End: 368
• Publication Date: 2016-08
• Subjects: black silicon -- atmospheric pressure -- dry texturing -- silicon nitride -- surface passivation -- emitter recombination; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.113
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: In this paper, we study the influence of modifying the geometry of nanotexture on its electrical properties. Nanotexture is formed by an industrially feasible dry-chemical etching process performed entirely in atmospheric pressure conditions. A surface modification process is developed that allows low surface recombination velocities ( S eff, min ≤ 10 cm/s) on nanotextured surfaces. By simultaneously improving the surface passivation and the emitter diffusion processes, we achieve an equivalent passivation level ( V OC, impl ≥ 670 mV) for nanotextured surfaces to that of reference textured surfaces after applying either PECVD or ALD based deposition techniques.