Effect of Different ALD Al2O3 Oxidants on the Surface Passivation of Black Silicon. (August 2016)

• Record Type: Journal Article
• Authors: Repo, Päivikki; Savin, Hele
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 381
• Page End: 385
• Publication Date: 2016-08
• Subjects: black silicon -- surface passivatoin -- aluminum oxide; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.116
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: We study how different oxidants in atomic layer deposition of aluminium oxide (ALD Al2 O3 ) affect the surface passivation of black silicon. Here we show that processes using ozone cause higher fixed charge but surprisingly lead to lower lifetimes in black silicon samples as compared to water-based samples. In planar samples however, the best surface passivation is reached with O3 -based processes. In case of water as oxidant, the planar wafers suffer from severe blistering and poorer surface passivation, while this seems to be the best process for black silicon. To find a reason for the lifetime differences we also study different Al2 O3 stacks where both H2 O and O3 are used as oxidants. In conclusion, surface texture seems to affect the optimal oxidant in the ALD process.