Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell. (August 2016)

• Record Type: Journal Article
• Authors: Zheng, Peiting; Rougieux, Fiacre E.; Samundsett, Chris; Yang, Xinbo; Wan, Yimao; Degoulange, Julien; Einhaus, Roland; Rivat, Pascal; Macdonald, Daniel
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 434
• Page End: 442
• Publication Date: 2016-08
• Subjects: silicon -- upgraded metallurgical grade -- compensation -- solar cell -- modelling and simulation; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.124
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: In this paper, we present the 3D simulation of>20% efficiency solar cells using n- type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.