Silicon Heterojunction Solar Cells Combining an a-Si:H (n) Electron-collector with a PEDOT:PSS Hole-collector. (August 2016)

• Record Type: Journal Article
• Authors: Gogolin, Ralf; Zielke, Dimitri; Lövenich, Wilfried; Sauer, Rüdiger; Schmidt, Jan
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 638
• Page End: 643
• Publication Date: 2016-08
• Subjects: PEDOT:PSS -- heterojunction -- organic-silicon junction -- interface preparation; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.030
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: We combine PEDOT:PSS as hole-selective layer on c -Si with a well-passivating electron-selective a -Si:H( n ) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c -Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiO x tunneling layer between the c -Si substrate and the PEDOT:PSS in detail. We find that a natural SiO x layer grown within a couple of minutes leads to low J 0 values ranging between (80 - 130) fA/cm 2, allowing for V oc values of ∼690 mV. Implementation of this PEDOT:PSS/SiO x / c -Si junctions into solar cells with phosphorus-diffused n + front results in low series resistance values of only 0.6 Ωcm 2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiO x / c -Si junction to the back of heterojunction cells with an a -Si:H( n )/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher V oc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the V oc values of this first batch were already above 650 mV.