Manufacturing and Characterization of III-V on Silicon Multijunction Solar Cells. (August 2016)

• Record Type: Journal Article
• Authors: Veinberg-Vidal, Elias; Dupré, Cécilia; Garcia-Linares, Pablo; Jany, Christophe; Thibon, Romain; Card, Tiphaine; Salvetat, Thierry; Scheiblin, Pascal; Brughera, Céline; Fournel, Frank; Desieres, Yohan; Veschetti, Yannick; Sanzone, Vincent; Mur, Pierre; Decobert, Jean; Datas, Alejandro
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 242
• Page End: 247
• Publication Date: 2016-08
• Subjects: solar cells -- photovoltaics -- multijunction -- III-V on silicon -- direct wafer bonding; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.066
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an S-shaped J-V curve with a kink close to V oc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in J sc and V oc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2cm 2 cell.