Light-induced Degradation in Multicrystalline Silicon: The Role of Copper. (August 2016)

• Record Type: Journal Article
• Authors: Inglese, Alessandro; Focareta, Alessia; Schindler, Florian; Schön, Jonas; Lindroos, Jeanette; Schubert, Martin C.; Savin, Hele
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 808
• Page End: 814
• Publication Date: 2016-08
• Subjects: Light-induced degradation -- multicrystalline silicon -- copper metal impurities; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.073
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain quality were found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.