Finite Element Simulation of the Local Al/Si Contact Formation. (August 2016)

• Record Type: Journal Article
• Authors: Herguth, Axel
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 75
• Page End: 81
• Publication Date: 2016-08
• Subjects: Al/Si contact formation -- local contacts -- PERC; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.018
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: The formation of local Al/Si contacts, as found in PERC type cells, was evaluated by finite element simulation based on a model of Si diffusion in the molten Al layer as well as dissolution and recrystallization of Si at the liquid/solid interface. In accordance with experimental observations the simulations reproduce the characteristic lateral spread of Si in the Al layer, the different cavity shapes (ranging from round to ω-shaped cavities) as well as the development of the Al-doped recrystallized region which forms the high-low junction to the lower doped substrate responsible for the back surface field passivation.