Status of Industrial Back Junction n-type Si Solar Cell Development. (August 2016)

• Record Type: Journal Article
• Authors: Bordihn, Stefan; Mertens, Verena; Cieslak, Janko; Zimmermann, Gregor; Lantzsch, Ronny; Scharf, Jessica; Geißler, Steffen; Hörnlein, Stefan; Neuber, Markus; Laube, Steffen; Dietrich, Alexandra; Szramowski, Barbara; Esefelder, Sascha; Ballmann, Tabitha; Eisenhawer, Björn; Mohr, Andreas; Schaper, Martin; Petter, Kai; Müller, Jörg W.; Jeong, Daniel J.W.; Hao, Ruiying; Ravi, T.S.
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 678
• Page End: 683
• Publication Date: 2016-08
• Subjects: n-type Si -- back junction solar cell; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.042
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: Here we present the latest results of our double side contacted, all screen printed n -type mono silicon solar cell development. N -type Czochralski ( n -Cz) silicon solar cell results are compared to those of standard p -type Cz ( p -Cz) silicon and n -type epitaxial ( np + epi) wafers, produced by Crystal Solar, having an integrated epitaxial boron doped p +-silicon layer. The np + epi and p -Cz wafers are processed applying the Hanwha Q CELLS Q.ANTUM technology process flow to make PERC cells in our production line including process adaptations to mono wafers while the n -Cz wafers are processed with an extended Q.ANTUM sequence including additional processing steps like cleaning steps and a BBr3 tube furnace diffusion to create the rear side boron p +-silicon layer. We achieve conversion efficiencies up to 21.8% for the n -type Cz silicon back junction solar cell with open circuit voltage values of 671 mV. The p -type Cz silicon solar cell shows non-stabilized efficiencies up to 21.2%. The n -type epitaxial solar cells have efficiencies up to 21.7% with fill factor values of up to 82.1% due to the high rear side conductivity of the integrated epitaxial boron doped p +-silicon layer. The latter solar cell results demonstrate a new path to industrial solar cells with efficiencies >22% by combination of simple and robust solar cell processing and epitaxial wafer growth with built-in doping layers.