Nanoscale Positioning of Single‐Photon Emitters in Atomically Thin WSe2. Issue 33 (15th June 2016)

• Record Type: Journal Article
• Authors: Kern, Johannes; Niehues, Iris; Tonndorf, Philipp; Schmidt, Robert; Wigger, Daniel; Schneider, Robert; Stiehm, Torsten; Michaelis de Vasconcellos, Steffen; Reiter, Doris E.; Kuhn, Tilmann; Bratschitsch, Rudolf
• Is Part Of: Advanced materials. Volume 28:Issue 33(2016)
• Page Start: 7101
• Page End: 7105
• Publication Date: 2016-06-15
• Subjects: atomically thin semiconductors -- nanogaps -- single‐photon emitters -- strain engineering -- super‐localization microscopy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201600560
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Single‐photon emitters in monolayer WSe2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single‐photon emitters are localized there with a precision better than 140 nm.