High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment. Issue 32 (20th May 2016)

• Record Type: Journal Article
• Authors: Shim, Jaewoo; Oh, Aely; Kang, Dong‐Ho; Oh, Seyong; Jang, Sung Kyu; Jeon, Jaeho; Jeon, Min Hwan; Kim, Minwoo; Choi, Changhwan; Lee, Jaehyeong; Lee, Sungjoo; Yeom, Geun Young; Song, Young Jae; Park, Jin‐Hong
• Is Part Of: Advanced materials. Volume 28:Issue 32(2016)
• Page Start: 6985
• Page End: 6992
• Publication Date: 2016-05-20
• Subjects: O2 plasma -- photodetectors -- ReS2 -- thin‐film transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201601002
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A high‐performance ReS2 ‐based thin‐film transistor and photodetector with high on/off‐current ratio (10 4 ), high mobility (7.6 cm 2 V −1 s −1 ), high photoresponsivity (2.5 × 10 7 A W −1 ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.