Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe. Issue 34 (9th August 2016)

• Record Type: Journal Article
• Authors: Zhou, Zhiwei; Yang, Junyou; Jiang, Qinghui; Luo, Yubo; Zhang, Dan; Ren, Yangyang; He, Xu; Xin, Jiwu
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 34(2016)
• Page Start: 13171
• Page End: 13175
• Publication Date: 2016-08-09
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6ta04240f
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Abstract : We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum ZT value of c . 1.1 at 873 K was obtained in Sn0.94 Bi0.06 Te, an enhancement of 165% compared with the undoped sample.