Growth kinetics of copper sulfide thin films by photochemical deposition. Issue 35 (5th August 2016)

• Record Type: Journal Article
• Authors: Vas-Umnuay, Paravee; Kim, Ki-Joong; Chang, Chih-Hung
• Is Part Of: CrystEngComm. Volume 18:Issue 35(2016)
• Page Start: 6748
• Page End: 6758
• Publication Date: 2016-08-05
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c6ce00967k
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Copper sulfide (Cu x S) thin films were deposited by photochemical deposition. The process conditions were investigated to promote the heterogeneous surface reaction on the substrate. Successful kinetic modeling and parameter estimations were performed by COMSOL and MATLAB simulations. Abstract : In this work, copper sulfide (Cu x S) thin films were deposited by photochemical deposition (PCD). Although deposition of Cu x S thin films via PCD undergoes both heterogeneous and homogeneous reactions, we were able to determine the process conditions that will promote the heterogeneous surface reaction on the surface of the substrate. COMSOL numerical simulations and MATLAB were used to estimate the final CuS film thickness and the process kinetics based on experimental results under multiple operating conditions. Successful kinetic modeling and parameter estimations were performed by adjusting the parameters of mass transport equations that controlled the proposed reaction mechanism of CuS. Therefore, this model can be used as a tool for kinetic parameter estimation and optimization of metal chalcogenide thin films in a PCD system.