Enhancing photoluminescence properties of SiC/SiO2 coaxial nanocables by making oxygen vacancies. Issue 34 (9th August 2016)

• Record Type: Journal Article
• Authors: Liu, Wenna; Chen, Junhong; Yang, Tao; Chou, Kuo-Chih; Hou, Xinmei
• Is Part Of: Dalton transactions. Volume 45:Issue 34(2016)
• Page Start: 13503
• Page End: 13508
• Publication Date: 2016-08-09
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Chemistry, Inorganic -- Periodicals; 546.05
• DOI: 10.1039/c6dt02049f
• Languages: English
• ISSNs: 1477-9226

Abstract

Abstract : Enhanced photoluminescence properties of SiC/SiO2 coaxial nanocables by making oxygen vacancies. Abstract : Coaxial nanocables (CNs) with an SiC core and a SiO2 shell were fabricated at a large scale by a simple and low cost method. The thickness of the SiO2 shell could be controlled by etching in 1 M NaOH aqueous solution for different amounts of time. XRD, SEM, TEM, HRTEM, PL and UV–Vis spectra were adopted to investigate the morphology and optical properties of the obtained SiC/SiO2 CNs. Blue photoluminescence was observed at room temperature from the coaxial structure. The intensity of the single emission band at 468 nm (2.65 eV) exhibited a strong dependence on the thickness of the SiO2 layer and was significantly enhanced when the outer SiO2 shell had a thickness of 2.8 nm. The enhancement effect was attributed to oxygen vacancies (OV) and this was verified by deliberately enriching the surface OV through hydrogen treatment.