New highly linear tunable transconductor circuits with low number of MOS transistors. Issue 8 (2nd August 2016)

• Record Type: Journal Article
• Authors: Yucel, Firat; Yuce, Erkan
• Is Part Of: International journal of electronics. Volume 103:Issue 8(2016)
• Page Start: 1301
• Page End: 1317
• Publication Date: 2016-08-02
• Subjects: MOSFET circuits -- transconductor -- inductor simulator; Electronics -- Periodicals; Electronic control -- Periodicals; 621.381
• DOI: 10.1080/00207217.2015.1092603
• Languages: English
• ISSNs: 0020-7217

Abstract

ABSTRACT: In this article, two new highly linear tunable transconductor circuits are proposed. The transconductors employ only six MOS transistors operated in saturation region. The second transconductor is derived from the first one with a slight modification. Transconductance of both transconductors can be tuned by a control voltage. Both of the transconductors do not need any additional bias voltages and currents. Another important feature of the transconductors is their high input and output impedances for cascadability with other circuits. Besides, total harmonic distortions are less than 1.5% for both transconductors. A positive lossless grounded inductor simulator with a grounded capacitor is given as an application example of the transconductors. Simulation and experimental test results are included to show effectiveness of the proposed circuits.