Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field‐effect transistor memory devices. Issue 19 (1st July 2016)

• Record Type: Journal Article
• Authors: Hung, Chih‐Chien; Wu, Hung‐Chin; Chiu, Yu‐Cheng; Tung, Shih‐Huang; Chen, Wen‐Chang
• Is Part Of: Journal of polymer science. Volume 54:Issue 19(2016)
• Page Start: 3224
• Page End: 3236
• Publication Date: 2016-07-01
• Subjects: charge transport -- crosslinking -- dielectric properties -- thin films; 547
• DOI: 10.1002/pola.28209
• Languages: English
• ISSNs: 0887-624X

Abstract

ABSTRACT: I n this study, we successfully synthesized water/methanol soluble random copolymers with a high dielectric constant, poly(n‐(hydroxymethyl) acrylamide‐ co‐ 5‐(9‐(5‐(diethylamino)pentyl)−2‐(4‐vinylphenyl)−9H‐fluorene(P(NMA‐ co ‐F6NSt)), which contained chemical crosslinkable segment (NMA) and hole trapping building block (F6NSt). The feeding molar ratios of two monomers (NMA:F6NSt) were set as 100:0, 95:5, 80:20, and 67:33 for the copolymers ofP1, P2, P3, andP4, respectively. The crosslinked P(NMA‐ co ‐F6NSt) thin film could serve as both dielectric and charge storage layers in organic field‐effect transistor (OFET) memory device and exhibited high k (i.e., 4.91–6.47) characteristics, leading to a low voltage operation and a small power consumption. Devices based on theP1 ‐P4 dielectrics showed excellent insulating properties and good charge storage performance under a low operating voltage in a range of ±5V because of tightly network structures and well‐dispersed trapping cites. In particular, P3 ‐based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 10 4 s, a large on/off ratio of 10 4, and good endurance characteristics as high as 200 cycles. The above results suggested that a high‐performance OFET memory device could be facilely achieved using the novel crosslinkable high‐ k copolymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem.2016, 54, 3224–3236 Abstract : Crosslinkable poly( n ‐(hydroxymethyl) acrylamide‐ co‐ 5‐(9‐(5‐(diethylamino)pentyl)−2‐(4‐vinylphenyl)−9H‐fluorene) (P(NMA‐ co ‐F6NSt)) with high dielectric constants of 4.91 ∼ 6.47 were used as both dielectric and charge storage layers in organic field‐effect transistor memory devices, leading to a low voltage operation and a small power consumption. In particular, P(NMA80 ‐ co ‐F6NSt20 )‐based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 10 4 s, a large on/off ratio of 10 4, and good endurance characteristics as high as 200 cycles.