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HARVARD Citation
Pecqueur, S. et al. (2016). Wide Band‐Gap Bismuth‐based p‐Dopants for Opto‐Electronic Applications. Angewandte Chemie international edition. 55 (35), pp. 10493-10497. [Online].
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Pecqueur, S. et al. (2016). Wide Band‐Gap Bismuth‐based p‐Dopants for Opto‐Electronic Applications. Angewandte Chemie international edition. 55 (35), pp. 10493-10497. [Online].