Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides. Issue 3 (September 2016)

• Record Type: Journal Article
• Authors: Wong, Swee Liang; Liu, Hongfei; Chi, Dongzhi
• Is Part Of: Progress in crystal growth and characterization of materials. Volume 62:Issue 3(2016)
• Page Start: 9
• Page End: 28
• Publication Date: 2016-09
• Subjects: Transition metal dichalcogenides -- Two-dimensional -- Chemical vapor deposition -- Material modification; Crystal growth -- Periodicals; Cristaux -- Croissance -- Périodiques; 548.5
• DOI: 10.1016/j.pcrysgrow.2016.06.002
• Languages: English
• ISSNs: 0960-8974

Abstract

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have received significant attention recently due to their unique properties such as a transition from indirect to direct band gap when thinned down to a monolayer and also valley-dependent photoluminescence. In addition, being a semiconductor with considerable mobility, it has been touted as a candidate in next generation electronics. However, a major hurdle to its implementation is the difficulty in producing large areas of these 2D TMDCs with well-defined thicknesses. In this review, we will first introduce the basic properties as well as the various synthesis methods of 2D TMDCs. Focus will be placed on recent advances in chemical vapor deposition (CVD) growth as they currently yield the largest areas. Obstacles present in CVD growth will be presented and existing solutions to them will be discussed in tandem with current characterization methods for evaluation of crystal quality. Through our presentation on the latest approaches to issues in CVD growth, we hope to present the readers a perspective on recent developments as well as providing an outlook on the future of CVD growth of TMDCs.