Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors. Issue 1731 (11th February 2015)

• Record Type: Journal Article
• Authors: Dominguez, Miguel A.; Flores, Francisco; Luna, Adan; Alcantara, Salvador; Martinez, Javier; Luna-Lopez, Jose A.; Rosales, Pedro; Reyes, Claudia
• Editors: Veal, T. D.; Bierwagen, O.; Higashiwaki, M.; Janotti, A.
• Is Part Of: MRS proceedings. Issue 1731:(2015)
• Publication Date: 2015-02-11
• Subjects: electrical properties, -- thin film, -- spray pyrolysis; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.96
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: In this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2 /Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.