Dislocation Mobilities in GaN from Molecular Dynamics Simulations. Issue 1741 (2nd February 2015)

• Record Type: Journal Article
• Authors: Weingarten, N. Scott
• Editors: Albrecht, M.; Aubry, S.; Collazo, R.; Mishra, R. K.; Wu, C-C.
• Is Part Of: MRS proceedings. Issue 1741:(2015)
• Publication Date: 2015-02-02
• Subjects: III-V, -- dislocations, -- simulation; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.25
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The results of molecular dynamics (MD) simulations of dislocation glide in GaN using a Tersoff potential are presented. The simulation methodology involves applying a constant shear stress to a single crystal system containing an individual dislocation, with multiple slip systems considered. Upon reaching a steady state, the dislocation velocity as a function of applied stress and temperature are determined. Edge dislocations with a -type Burgers vectors in the basal, prismatic and pyramidal planes have been analyzed over the temperature range of 300-1300K. The results from simulations of c -type edge dislocations at 1300 K are also presented.