Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains. Issue 23 (1st March 2016)

• Record Type: Journal Article
• Authors: Zon, ; Poempool, Thanavorn; Kiravittaya, Suwit; Sopitpan, Suwat; Thainoi, Supachok; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak
• Is Part Of: MRS advances. Volume 1:Issue 23(2016)
• Page Start: 1729
• Page End: 1734
• Publication Date: 2016-03-01
• Subjects: molecular beam epitaxy (MBE), -- optoelectronic, -- nanostructure; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.172
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: The effects of GaAs anti-phase domains (APDs) on the growth of GaSb quantum dots (QDs) are investigated by molecular beam epitaxial growth of GaAs on Ge (001) substrate. Ge is a group-IV element and GaAs is a polar III-V compound semiconductor. Due to polar/non polar interface, GaAs APDs are formed. Initial formation of APD relates to a non-uniform growth of high index GaAs surfaces. However, due to high sticking coefficient of Sb atoms at low substrate growth temperature, GaSb QDs can be formed on the whole surface of the sample without any effects from APD boundary. The buffer layer growth temperature is one of the key roles to control the APDs formation. Therefore we tried to adjust the optimum conditions such as buffer layer thickness and growth temperature to get nearly flat sample surface with large APDs for high QDs density (∼ 8×10 9 dots/cm 2 ). Low-temperature photoluminescence is conducted and GaSb QDs peak is observed at the energy range of 1.0 eV-1.3 eV.