Phenylquinoline Derivatives as Efficient Interfacial Layer Materials for High‐Performance Organic Electronic Devices. (4th July 2016)
- Record Type:
- Journal Article
- Title:
- Phenylquinoline Derivatives as Efficient Interfacial Layer Materials for High‐Performance Organic Electronic Devices. (4th July 2016)
- Main Title:
- Phenylquinoline Derivatives as Efficient Interfacial Layer Materials for High‐Performance Organic Electronic Devices
- Authors:
- Gunasekar, Kumarasamy
Cho, Woosum
Long, Dang Xuan
Reddy, Saripally Sudhaker
Song, Myungkwan
Noh, Yong‐Young
Jin, Sung‐Ho - Abstract:
- Abstract : Thin film electronic and optoelectronic devices demand electrodes with a work function ( Φ ) that is sufficiently low to facilitate the transport of electrons in and out of the lowest unoccupied molecular orbital of a given semiconductor. Herein, phenothiazine‐, carbazole‐, and fluorene‐based phenylquinoline derivatives as efficient interfacial layer (IL) materials for solution‐processable organic and metal oxide electronic devices are reported. The IL is applied on top of a charge injection electrode in various solution‐processed devices, including n‐channel organic thin‐film transistors (OTFTs) with [6, 6]‐phenyl C71 ‐butyric acid methyl ester (PC71 BM) and poly[N, N′‐ bis (2‐octyldodecyl)‐naphthalene‐1, 4:5, 8‐ bis (dicarboximide)‐2, 6‐diyl]‐alt‐5, 5′‐(2, 2′‐bithiophene) [P(NDI2OD‐T2)] and amorphous indium gallium zinc oxide (IGZO) transistors, and also in organic photovoltaics (OPVs). Both PC71 BM‐ and P(NDI2OD‐T2)‐based n‐channel OTFTs with IL show enhanced mobility by more than 200% compared to bare Au electrode. IGZO transistors showed much improved mobility of 15.3 cm 2 V −1 s −1 with an IL compared to bare Au (0.6 cm 2 V −1 s −1 ) device. A significantly improved power conversion efficiency (PCE) of 7.63% is obtained for IL utilizing the poly[4, 8‐ bis [(2‐ethylhexyl)oxy]benzo[1, 2‐b:4, 5‐b′]dithiophene‐2, 6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3, 4‐b]‐thiophenediyl] (PTB7):PC71 BM based OPVs compared to 4.75% of control device. UltravioletAbstract : Thin film electronic and optoelectronic devices demand electrodes with a work function ( Φ ) that is sufficiently low to facilitate the transport of electrons in and out of the lowest unoccupied molecular orbital of a given semiconductor. Herein, phenothiazine‐, carbazole‐, and fluorene‐based phenylquinoline derivatives as efficient interfacial layer (IL) materials for solution‐processable organic and metal oxide electronic devices are reported. The IL is applied on top of a charge injection electrode in various solution‐processed devices, including n‐channel organic thin‐film transistors (OTFTs) with [6, 6]‐phenyl C71 ‐butyric acid methyl ester (PC71 BM) and poly[N, N′‐ bis (2‐octyldodecyl)‐naphthalene‐1, 4:5, 8‐ bis (dicarboximide)‐2, 6‐diyl]‐alt‐5, 5′‐(2, 2′‐bithiophene) [P(NDI2OD‐T2)] and amorphous indium gallium zinc oxide (IGZO) transistors, and also in organic photovoltaics (OPVs). Both PC71 BM‐ and P(NDI2OD‐T2)‐based n‐channel OTFTs with IL show enhanced mobility by more than 200% compared to bare Au electrode. IGZO transistors showed much improved mobility of 15.3 cm 2 V −1 s −1 with an IL compared to bare Au (0.6 cm 2 V −1 s −1 ) device. A significantly improved power conversion efficiency (PCE) of 7.63% is obtained for IL utilizing the poly[4, 8‐ bis [(2‐ethylhexyl)oxy]benzo[1, 2‐b:4, 5‐b′]dithiophene‐2, 6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3, 4‐b]‐thiophenediyl] (PTB7):PC71 BM based OPVs compared to 4.75% of control device. Ultraviolet photoelectron spectroscopy study reveals that phenylquinoline derivatives significantly lower the Φ of Au, thus facilitating electron injection/extraction in the device. Abstract : Highly efficient phenothiazine‐, carbazole‐, and fluorene‐based phenylquinoline derivatives are introduced as interfacial layer materials in metal oxide and organic thin‐film transistors as well as in organic photovoltaic cells. Ultraviolet photoelectron spectroscopy studies reveal that phenylquinoline derivatives significantly lower the work function of Au as well as indium tin oxide, and facilitate electron injection and extraction in the devices. … (more)
- Is Part Of:
- Advanced Electronic Materials. Volume 2:Number 8(2016)
- Journal:
- Advanced Electronic Materials
- Issue:
- Volume 2:Number 8(2016)
- Issue Display:
- Volume 2, Issue 8 (2016)
- Year:
- 2016
- Volume:
- 2
- Issue:
- 8
- Issue Sort Value:
- 2016-0002-0008-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2016-07-04
- Subjects:
- interfacial layers -- organic photovoltaic cells -- organic thin‐film transistors -- metal oxide thin‐film transistors -- phenylquinoline
Materials -- Electric properties -- Periodicals
Materials science -- Periodicals
Magnetic materials -- Periodicals
Electronic apparatus and appliances -- Periodicals
537 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/aelm.201600086 ↗
- Languages:
- English
- ISSNs:
- 2199-160X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.848400
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 714.xml