Cite
HARVARD Citation
Hung, C. et al. (2016). A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. Solid-state electronics. pp. 5-9. [Online].
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Hung, C. et al. (2016). A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. Solid-state electronics. pp. 5-9. [Online].