Chemical vapor deposition of bilayer graphene with layer-resolved growth through dynamic pressure control. Issue 31 (25th July 2016)

• Record Type: Journal Article
• Authors: Luo, Birong; Chen, Bingyan; Wang, Anle; Geng, Dechao; Xu, Jie; Wang, Huaping; Zhang, Zhiyong; Peng, Lianmao; Xu, Zhiping; Yu, Gui
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 31(2016)
• Page Start: 7464
• Page End: 7471
• Publication Date: 2016-07-25
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6tc02339h
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Large-area AB stacked bilayer graphene layers with layer-resolved growth were successfully fabricated through dynamic pressure chemical vapor deposition. Abstract : In this work, a dynamic pressure atmosphere is constructed through cutting off the gas outlet in the chemical vapor deposition process, in which the total pressure of the system uniformly varies with a gradient and the associated growth environment changes. Through modulating the variation rate of system pressure, the layer-resolved growth of graphene from single-layer graphene grains to bilayer graphene patches and then ultimately larger-area bilayer graphene films has been realized. Based on the analysis results obtained, it is shown that the self-limiting effect of single-layer graphene on Cu foil can be broken by the accumulation of feedstock (CH4 /H2 ) during this dynamic process to enable the continued growth of bilayer graphene. The electrical transport studies demonstrate that devices made of the as-grown bilayer graphene exhibit obvious tunability of the band gap, showing the typical characteristics of AB stacked bilayer graphene.