A high‐efficiency gan power amplifier with harmonic control based on Si‐IPDS. Issue 9 (27th June 2016)

• Record Type: Journal Article
• Authors: Jin An, Sung; Min Yook, Jong; Woong Yoon, Tae; Kim, Hyeok; Chul Kim, Jun; Yook, Jong‐Gwan; Park, Youngcheol; Kim, Dongsu
• Is Part Of: Microwave and optical technology letters. Volume 58:Issue 9(2016:Sep.)
• Page Start: 2178
• Page End: 2182
• Publication Date: 2016-06-27
• Subjects: GaN HEMT -- harmonic control -- high efficiency -- quasi‐MMIC -- power amplifier; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.30003
• Languages: English
• ISSNs: 0895-2477

Abstract

ABSTRACT: This article presents a high‐efficiency power amplifier using quasi‐MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate‐source voltage waveform control with Class‐F operation achieves significant efficiency improvements. The quasi‐MMIC technology using silicon‐integrated passive devices (Si‐IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class‐F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a P sat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2178–2182, 2016