Photoelectricity properties of BaTiO3/γ-Fe2O3 composite granular film. (2nd January 2016)

• Record Type: Journal Article
• Authors: Zhao, W. X.; Li, Q. L.; Sun, B.; Shen, Z.; Liu, Y. H.; Chen, P.
• Is Part Of: Materials technology. Volume 31:Number 1(2016)
• Page Start: 48
• Page End: 52
• Publication Date: 2016-01-02
• Subjects: Ag/[BaTiO3/γ-Fe2O3]/Si heterojunction -- Resistance switching effect -- Photovoltaic effects -- Photoconductivity effects; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Technological innovations -- Periodicals; 620.1105
• DOI: 10.1179/1753555715Y.0000000026
• Languages: English
• ISSNs: 1066-7857

Abstract

Abstract : Ag/[BaTiO3 /γ-Fe2 O3 ]/Si heterojunctions were grown by high vacuum magnetron sputtering system and were annealed at temperature 100–300°C under the vacuum conditions. All samples exhibit the rectification behaviour in the dark and under light irradiation. The resistive switching effect is observed in Ag/[BaTiO3 /γ-Fe2 O3 ]/Si heterojunctions. The resistive switching effect under white light irradiation is more obvious than that in the dark. The photovoltage effect and photoconductivity effect of Ag/[BaTiO3 /γ-Fe2 O3 ]/Si heterojunctions are observed and become stronger with increasing annealed temperature.