Atomic Layers: Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016). Issue 25 (3rd July 2016)

• Record Type: Journal Article
• Authors: Cui, Fangfang; Wang, Cong; Li, Xiaobo; Wang, Gang; Liu, Kaiqiang; Yang, Zhou; Feng, Qingliang; Liang, Xing; Zhang, Zhongyue; Liu, Shengzhong; Lei, Zhibin; Liu, Zonghuai; Xu, Hua; Zhang, Jin
• Is Part Of: Advanced materials. Volume 28:Issue 25(2016)
• Page Start: 5018
• Page End: 5018
• Publication Date: 2016-07-03
• Subjects: 2D anisotropic materials -- epitaxial growth -- high crystal quality -- Re–Te binary eutectic -- rhenium disulphide (ReS2); Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201670175
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : H. Xu, J. Zhang, and co‐workers synthesize anisotropic 2D‐layered rhenium disulfide with high crystal quality and uniform monolayer thickness. As described on page 5019, tellurium‐assisted epitaxial growth on a mica substrate is chosen to generate such structures.