Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films. Issue 7 (27th May 2016)

• Record Type: Journal Article
• Authors: Reinhardt, Anna; Frenzel, Heiko; von Wenckstern, Holger; Spemann, Daniel; Grundmann, Marius
• Is Part Of: Physica status solidi. Volume 213:Issue 7(2016:Jul.)
• Page Start: 1767
• Page End: 1773
• Publication Date: 2016-05-27
• Subjects: amorphous semiconductors -- Electronic transport -- magnetron sputtering -- thin films -- ZnON; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532939
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract: Abstractauthoren We discuss the carrier transport mechanism in amorphous zinc oxynitride (ZnON) thin films fabricated by means of long‐throw magnetron sputtering. ZnON films were radio‐frequency sputtered from a metallic zinc target in a reactive atmosphere consisting of N 2, O 2, and Ar. The electrical conductivity of the films was controlled via variation of the deposition pressure and substrate temperature. Room temperature deposition yields amorphous, n‐type semiconducting ZnON thin films with a maximum Hall mobility of 25 cm 2 V − 1 s − 1 and carrier concentrations of ∼ 10 18 cm − 3 . The mobility can be further increased up to the 40 cm 2 V − 1 s − 1 range by moderate substrate heating or annealing up to 200 ∘ C while maintaining the amorphous phase. From temperature‐dependent Hall effect measurements, we deduced that a percolation conduction model is most likely for the electron transport in the as‐grown ZnON thin films. For annealed samples, a quasi‐metallic behavior is observed.