On the rotational alignment of graphene domains grown on Ge(110) and Ge(111). (September 2015)

• Record Type: Journal Article
• Authors: Rogge, P.C.; Foster, M.E.; Wofford, J.M.; McCarty, K.F.; Bartelt, N.C.; Dubon, O.D.
• Is Part Of: MRS communications. Volume 5:Number 3(2015:Sep.)
• Page Start: 539
• Page End: 546
• Publication Date: 2015-09
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1557/mrc.2015.63
• Languages: English
• ISSNs: 2159-6859

Abstract

Abstract: Abstract : We have used low-energy electron diffraction and microscopy to compare the growth of graphene on hydrogen-free Ge(111) and Ge(110) from an atomic carbon flux. Growth on Ge(110) leads to significantly better rotational alignment of graphene domains with the substrate. To explain the poor rotational alignment on Ge(111), we have investigated experimentally and theoretically how the adatom reconstructions of Ge interact with graphene. We find that the ordering transition of the Ge(111) adatom reconstruction is not significantly perturbed by graphene. Density functional theory calculations show that graphene on reconstructed Ge(110) has large-amplitude corrugations, whereas it is remarkably flat on reconstructed Ge(111). We argue that the absence of corrugations prevents graphene islands from locking into a preferred orientation.