Resistive Switching Memory Integrated with Nanogenerator for Self‐Powered Bioimplantable Devices. (25th May 2016)

• Record Type: Journal Article
• Authors: Kim, Bo‐Yun; Lee, Woong‐Hee; Hwang, Hyun‐Gyu; Kim, Dong‐Ha; Kim, Jeong‐Hun; Lee, Sang‐Hoon; Nahm, Sahn
• Is Part Of: Advanced functional materials. Volume 26:Number 29(2016)
• Page Start: 5211
• Page End: 5221
• Publication Date: 2016-05-25
• Subjects: implantable biomedical applications -- nanogenerators -- NKN thin films -- ReRAMs -- self‐powered systems; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201505569
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5 K0.5 )NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2 /Si and flexible TiN/Polyimide (TiN‐PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen‐vacancy filaments. They have good ReRAM properties such as a large ratio of R HRS to R LRS as well as high reliability. The NKN film grown on flexible TiN‐PI substrate exhibits a high piezoelectric strain constant of 50 pm V −1 . The NKN NG has a large open‐circuit output voltage of 2.0 V and a short‐circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 10 2 are obtained from NKN ReRAM driven by NKN NG. Abstract : For self‐powered bioimplantable device applications, a resistive random access memory (ReRAM) driven by a piezoelectric nanogenerator (NG) is developed. Biocompatible (Na0.5 K0.5 )NbO3 (NKN) lead‐free piezoelectric thin films are used for both ReRAM and NG. The NKN ReRAM powered by NKN NG shows a stable memory performance, which can be applied to bioMEMS.