Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields. Issue 31 (7th July 2016)

• Record Type: Journal Article
• Authors: Eiwwongcharoen, Win; Nakareseisoon, Nitas; Thainoi, Supachok; Panyakeow, Somsak; Kanjanachuchai, Songphol
• Is Part Of: CrystEngComm. Volume 18:Issue 31(2016)
• Page Start: 5852
• Page End: 5859
• Publication Date: 2016-07-07
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c6ce01127f
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Highly strained InAs layers epitaxially grown on GaAs/InGaAs cross-hatch surfaces may relax via multiple pathways, resulting in morphologies such as quantum wires, quasi-three-dimensional quantum dots and micron-sized pyramids. Abstract : Thin, highly-strained InAs layers epitaxially grown on GaAs/InGaAs cross-hatch surfaces undergo postgrowth transformations that yield several morphologies ranging from aligned quantum wires to quantum dots and micron-scale pyramids. The shape varieties result from the multiple pathways created from the combined/competitive effects of asymmetric adatom diffusions, subsurface stress fields and misfit energy minimization. These morphologies reveal the multiple outcomes of metastable states between the two- and the three-dimensional transition that if properly captured and engineered may open up new windows of opportunities both in devices such as sensors and in fundamental quantum studies.