High-performance ultraviolet photodetectors based on CdS/CdS:SnS2 superlattice nanowires. Issue 30 (18th July 2016)

• Record Type: Journal Article
• Authors: Gou, Guangyang; Dai, Guozhang; Qian, Chuan; Liu, Yufeng; Fu, Yan; Tian, Zhenyang; He, Yinke; Kong, Lingan; Yang, Junliang; Sun, Jia; Gao, Yongli
• Is Part Of: Nanoscale. Volume 8:Issue 30(2016)
• Page Start: 14580
• Page End: 14586
• Publication Date: 2016-07-18
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c6nr02915a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : High-quality CdS/CdS:SnS2 superlattice nanowires with periodic emission properties were synthesized, and the novel CdS/CdS:SnS2 -based UV-photodetector exhibits excellent performance. Abstract : CdS heterostructure nanomaterials are attractive for their potential applications in integrated optoelectronic devices. Herein, the high-quality CdS/CdS:SnS2 superlattice nanowires were synthesized through a micro-environmental controlled co-evaporation technique, which shows periodic emission properties and that their structures are periodic and alternating. For the first time, we demonstrate the fabrication of high-performance ultraviolet photodetectors using unique CdS/CdS:SnS2 superlattice nanowires. The optoelectronic properties of the photodetectors were studied and compared to those devices based on pure CdS nanowires. The as-fabricated photodetectors (under 365 nm) based on CdS/CdS:SnS2 superlattice nanowires showed a high photocurrent to dark current ratio of 10 5, a large photoresponsivity of 2.5 × 10 3 A W −1, a fast response time of 10 ms and an excellent external quantum efficiency of 8.6 × 10 5 at room temperature, which shows better performance than pure CdS nanowires photodetectors. The results indicate that CdS/CdS:SnS2 superlattice nanowires are very promising potential candidates in nanoscale electronic and optoelectronic devices.