A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors. Issue 3 (2nd July 2016)

• Record Type: Journal Article
• Authors: Hong, Seonghwan; Park, Jeong Woo; Kim, Hee Jun; Kim, Yeong-gyu; Kim, Hyun Jae
• Is Part Of: Journal of information display. Volume 17:Issue 3(2016)
• Page Start: 93
• Page End: 101
• Publication Date: 2016-07-02
• Subjects: Amorphous oxide semiconductor -- thin-film transistor -- solution process -- multi-stacked active layer; Information display systems -- Periodicals; Information display systems; Electronic journals; Periodicals; 621.381542
• DOI: 10.1080/15980316.2016.1200501
• Languages: English
• ISSNs: 1598-0316

Abstract

ABSTRACT: In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve their electrical characteristics and stabilities based on the authors' previous researches. The MSAL structures can overcome an inherent weakness of the solution-processed AOS TFTs, which is the creation of porosities from solvent volatilization. Furthermore, by modifying each layer, the performance and reliability of the solution-processed AOS TFTs could be improved more. Here, the fundamental studies of MSAL structures with homo-stacked active-layer TFTs are presented, and the various modulations of active layers in hetero-stacked active-layer TFTs are covered. In addition, the effect of the interface between the stacked layers is also discussed.