Improved Performance of YIG (Y3Fe5O12) Films Grown on Pt‐Buffered Si Substrates by Chemical Solution Deposition Technique. Issue 7 (14th May 2016)

• Record Type: Journal Article
• Authors: Guo, Xin; Chen, Ying; Wang, Genshui; Ge, Jun; Zhang, Yuanyuan; Tang, Xiaodong; Ponchel, Freddy; Remiens, Denis; Dong, Xianlin
• Editors: Gomez, P.
• Is Part Of: Journal of the American Ceramic Society. Volume 99:Issue 7(2016)
• Page Start: 2217
• Page End: 2220
• Publication Date: 2016-05-14
• Subjects: yttrium/yttrium compounds -- films -- ferromagnetism/ferromagnetic materials -- magnetic materials/properties; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.14293
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract : High‐quality Yttrium iron garnet (YIG) films with crack‐free surface and improved magnetic performance were grown on platinum (Pt)‐buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm 3, which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750°C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak‐to‐peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt‐buffered Si substrates can be beneficial to the application of YIG films to integrated devices.