Towards Alpha Radiation Detection in Aqueous Solution: VLSI Technology Development for Diamond-Silicon Hybrid Sensors. Issue 1788 (8th October 2015)

• Record Type: Journal Article
• Authors: Giese, C.; Lewes-Malandrakis, G.; de Sanoit, J.; Pomorski, M.; Nebel, C.
• Editors: Bartl, M.H.; Budker, D.; Caldwell, J.; Christiansen, S.; Ferry, V.; Giebink, C.; Jelezko, F.; Kéna-Cohen, S.; Larouche, S.; Meriles, C.; Millstone, J.; Nesladek, M.; Shvets, G.; Silva, C.; Stavenga, D.G.; Stingelin, N.; Tang, M.L.; Yang, J.; Zollfrank, C.
• Is Part Of: MRS proceedings. Issue 1788(2015)
• Publication Date: 2015-10-08
• Subjects: diamond, -- electrodeposition, -- actinide; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.835
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: In the presented work, we have developed VLSI technology processes for new prototype sensors based on the synthesis of boron doped nanocrystalline diamond (B-NCD) and silicon based commercial detectors. The process is based on commercial passivated implanted planar silicon (PIPS) devices of PD450 and CAM450 types (CANBERRA). A layer of B-NCD of several hundred nanometers thickness and boron concentration up to 10 21 atoms/cm 3 is grown on the SiOx passivation layer in an ellipsoidal plasma enhanced chemical vapor deposition (PECVD) reactor at temperatures from 520-750°C, in hydrogen atmosphere. . The diamond electrode is dry chemically structured and aluminum electrodes are realized before mounting in a three-fold housing for measurements in aqueous solution. The prototype sensors show an alpha spectroscopy resolution of 100 keV for 241 Am electroprecipitated from liquid solution.