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HARVARD Citation
Voitsekhovskii, A. et al. (n.d.). Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al2O3 insulator. Physica status solidi. 13 (7), pp. 647-650. [Online].
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Voitsekhovskii, A. et al. (n.d.). Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al2O3 insulator. Physica status solidi. 13 (7), pp. 647-650. [Online].