Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer. Issue 7 (16th March 2016)

• Record Type: Journal Article
• Authors: Evropeytsev, E. A.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Belyaev, K. G.; Ivanov, S. V.; Pozina, G.; Toropov, A. A.
• Other Names: Sallet Vincent sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 7/9(2016:Jul.)
• Page Start: 503
• Page End: 506
• Publication Date: 2016-03-16
• Subjects: metamorphic buffer layer -- superlattice -- vertical carrier transport -- enlarged quantum well; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510305
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report on the growth by molecular‐beam epitaxy of short‐period ZnSe/CdSe superlattices (SLs) on an In0.3 Ga0.7 As metamorphic buffer layer. Such SLs are considered as a promising material for a wide band‐gap photoactive p‐n junction in a hybrid monolithic Ge/Inx Ga1‐x As/Iny (Al, Ga)1‐y As/II‐VI solar cell. Lattice‐matching of the SLs to the In0.3 Ga0.7 As layer is confirmed by X‐ray diffractometry. Vertical transport of photoexcited carriers is investigated by means of both steady state and time‐resolved photoluminescence techniques in heterostructures containing the ZnSe/CdSe SL with an enlarged quantum well (EQW). Characteristic times of the carrier transport across the SL towards EQW are evaluated in the temperature range 120–300 K. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)