Influence of source transport rate upon fractions of Mg and Se in Zn1‐xMgxSeyTe1–y layers grown by metalorganic vapor phase epitaxy. Issue 7 (16th March 2016)

• Record Type: Journal Article
• Authors: Saito, Katsuhiko; Abiru, Masakatsu; Mori, Eiichiro; Araki, Yasuhiro; Tanaka, Daichi; Tanaka, Tooru; Guo, Qixin; Nishio, Mitsuhiro
• Other Names: Sallet Vincent sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 7/9(2016:Jul.)
• Page Start: 443
• Page End: 447
• Publication Date: 2016-03-16
• Subjects: ZnMgSeTe -- source transport rate -- fraction of Mg and Se -- Raman spectrum -- surface roughness; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510304
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: The growth of undoped Zn1– x Mg x Se y Te1– y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy has been carried out. The fractions of Mg and Se, Raman property and surface roughness have been characterized as a function of bis‐methylcyclopentadienyl‐magnesium ((MeCp)2 Mg) or diethylselenide (DESe) transport rates. It has been demonstrated that the Mg and Se fractions in Zn1– x Mg x Se y Te1– y layer can be controlled successfully by these source transport rates. Furthermore, the behaviors of two Raman peaks related to ZnSeTe‐like longitudinal optical phonon mode and MgSeTe‐like one have been clarified for some Mg and Se fractions in Zn1– x Mg x Se y Te1– y layers. It has been shown by varying (MeCp)2 Mg or DESe transport rates that Zn1‐ x Mg x Se y Te1– y layer nearly‐lattice‐matched to ZnTe substrate shows low surface roughness. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)