Comparative studies of CdSe/ZnSe quantum dot structures epitaxially grown with or without a sub‐monolayer CdTe stressor. Issue 7 (3rd March 2016)

• Record Type: Journal Article
• Authors: Rakhlin, M. V.; Belyaev, K. G.; Sedova, I. V.; Sorokin, S. V.; Gronin, S. V.; Usikova, A. A.; Sitnikova, A. A.; Brunkov, P. N.; Ivanov, S. V.; Toropov, A. A.
• Other Names: Sallet Vincent sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 7/9(2016:Jul.)
• Page Start: 514
• Page End: 517
• Publication Date: 2016-03-03
• Subjects: CdSe quantum dots -- molecular beam epitaxy -- single photon emission -- II‐VI compounds; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510302
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report on comparative studies of the emission properties of CdSe/ZnSe quantum dots (QDs) grown by molecular beam epitaxy either with or without predeposition of a sub‐monolayer CdTe stressor, and in the latter case, either with or without in‐situ thermal annealing. The emission of a limited number of QDs was registered in all samples by micro‐photoluminescence confocal spectroscopy through 500‐nm‐size round apertures opened in a non‐transparent gold mask by ball assisted etching technique. The measurements reveal the lowest density of emitting QDs in the sample grown with the in‐situ annealing that is attributed to both ripening of the CdSe QDs and strain relaxation in the largest QDs, followed by formation of defects serving as centres of nonradiative recombination. The employment of the CdTe stressor causes narrowing of the total QDs emission band and simultaneous broadening of the single‐QD lines that is consistent with the formation of a relatively homogeneous dense array of type‐I CdSe/ZnSe QDs adjoining type‐II Zn(Cd)Te/ZnSe nanostructures. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)