Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy. Issue 7 (17th February 2016)

• Record Type: Journal Article
• Authors: Wang, Lin; Guillemin, Sophie; Chauveau, Jean‐Michel; Sallet, Vincent; Jomard, Francois; Brenier, Roger; Consonni, Vincent; Brémond, Georges
• Other Names: Sallet Vincent sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 7/9(2016:Jul.)
• Page Start: 576
• Page End: 580
• Publication Date: 2016-02-17
• Subjects: zinc oxide -- scanning capacitance microscopy -- carrier/dopant profiling; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510268
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath deposition (CBD). It is found that SCM data amplitude experiences a monotonic decrease with increasing Ga concentration from 2×10 17 cm ‐3 to 3×10 20 cm ‐3, indicating SCM being an appropriate technique for two dimensional dopant/carrier profiling in ZnO at nanoscale. For ZnO nanowires (NWs), a planariz‐ation process was developed based on dip‐coating of silica sol‐gel and chemical‐mechanical polishing. Then ZnO NWs were well detected from the silica matrix by SCM and the residual carrier concentration inside them was estimated through calibration method to be between 5×10 17 cm ‐3 and 2×10 18 cm ‐3 . Finally, the result was compared with that obtained from conventional capacitance‐voltage (C‐V) measrement and their difference was discussed. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)