Observation of topological phase transition by terahertz photoconductivity in HgTe‐based transistors. Issue 7 (25th February 2016)

• Record Type: Journal Article
• Authors: Kadykov, A. M.; Consejo, C.; Marcinkiewicz, M.; Viti, L.; Vitiello, M. S.; Krishtopenko, S. S.; Ruffenach, S.; Morozov, S. V.; Desrat, W.; Dyakonova, N.; Knap, W.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretsky, S. A.; Teppe, F.
• Other Names: Sallet Vincent sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 7/9(2016:Jul.)
• Page Start: 534
• Page End: 537
• Publication Date: 2016-02-25
• Subjects: terahertz photoconductivity -- field effect transistors -- topological transitions -- magnetic‐field -- Landau levels; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510264
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We have found the possibility to probe the magnetic field‐driven topological phase transition in HgTe‐based transistors by measuring their Terahertz photoconductivity response. At the critical magnetic field to which zero‐mode Landau levels cross, we have observed a pronounced photoconductivity peak independent on incident frequency and carrier concentration. Our results pave the way towards terahertz topological field effect transistors. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)