Effect of Sb on the quantum efficiency of GaInP solar cells. (18th April 2016)

• Record Type: Journal Article
• Authors: Barrigón, Enrique; Barrutia, Laura; Ochoa, Mario; Rey‐Stolle, Ignacio; Algora, Carlos
• Is Part Of: Progress in photovoltaics. Volume 24:Number 8(2016)
• Page Start: 1116
• Page End: 1122
• Publication Date: 2016-04-18
• Subjects: GaInP -- Sb -- EQE -- Ordering; Solar cells -- Periodicals; Photovoltaic cells -- Periodicals; Solar power plants -- Periodicals; 621.31245
• DOI: 10.1002/pip.2777
• Languages: English
• ISSNs: 1062-7995

Abstract

Abstract: The energy bandgap of GaInP solar cells can be tuned by modifying the degree of order of the alloy. In this study, we employed Sb to increase the energy bandgap of the GaInP and analyzed its impact on the performance of GaInP solar cells. An effective change in the cutoff wavelength of the external quantum efficiency of GaInP solar cells and an effective increase of 50 mV in the open‐circuit voltage of GaInP/Ga(In)As/Ge triple junction solar cells were obtained with the use of Sb. Copyright © 2016 John Wiley & Sons, Ltd. Abstract : We show an effective change in the cut‐off wavelength of the EQE of GaInP solar cells with the use of Sb. An effective increase of 50 mV in the V o c of triple junction solar cells has been obtained. The particular degree of order of the emitter and of the base influences the shape of the EQE.