Selective area laser deposition of FCC beta silicon carbide. Issue 7 (July 2016)

• Record Type: Journal Article
• Authors: Paul, James I.; Schmidt, Marc J J.; Abram, Timothy J.
• Is Part Of: Crystal research and technology. Volume 51:Issue 7(2016)
• Page Start: 441
• Page End: 445
• Publication Date: 2016-07
• Subjects: Nuclear Applications (E) SiC (D) Films (A) Joining; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201600089
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract : Silicon carbide has been deposited onto an alumina substrate by the thermal decomposition of the gaseous precursor tetramethylsilane. A 500 W ytterbium fibre laser was used to heat the surface of an alumina substrate resulting in the local deposition of SiC at the sample surface. The deposit was analysed using XRD and Raman spectroscopy. Abstract : Silicon Carbide (SiC) has been deposited onto an alumina substrate by the thermal decomposition of the gaseous precursor tetramethylsilane (TMS). A 500 W ytterbium fibre laser was used to heat the surface of an alumina substrate locally, resulting in deposition of SiC at the sample surface. The SiC deposit was analysed using energy dispersive X‐ray spectroscopy and X‐ray diffraction (XRD). The deposit was confirmed to be silicon carbide and found to be face centre cubic (FCC) crystal structure. Raman spectroscopy was used to measure the stoichiometry of the deposit which initially was found to be carbon rich. Further analysis by Raman spectroscopy suggests the deposit may be more stoichiometric following a two hour thermal treatment of the sample at 600 degrees celcius in an atmosphere of air.