Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism. Issue 26 (9th May 2016)

• Record Type: Journal Article
• Authors: Shim, Jaewoo; Kim, Hyo Seok; Shim, Yoon Su; Kang, Dong‐Ho; Park, Hyung‐Youl; Lee, Jaehyeong; Jeon, Jaeho; Jung, Seong Jun; Song, Young Jae; Jung, Woo‐Shik; Lee, Jaeho; Park, Seongjun; Kim, Jeehwan; Lee, Sungjoo; Kim, Yong‐Hoon; Park, Jin‐Hong
• Is Part Of: Advanced materials. Volume 28:Issue 26(2016)
• Page Start: 5293
• Page End: 5299
• Publication Date: 2016-05-09
• Subjects: barristors -- graphene -- heterojunctions -- trap‐assisted tunneling -- WSe2; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201506004
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A WSe2 ‐based vertical graphene‐transition metal dichalcogenide heterojunction barristor shows an unprecedented on‐current increase with decreasing temperature and an extremely high on/off‐current ratio of 5 × 10 7 at 180 K (3 × 10 4 at room temperature). These features originate from a trap‐assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.