Facet‐Independent Electric‐Field‐Induced Volume Metallization of Tungsten Trioxide Films. Issue 26 (9th May 2016)

• Record Type: Journal Article
• Authors: Altendorf, Simone G.; Jeong, Jaewoo; Passarello, Donata; Aetukuri, Nagaphani B.; Samant, Mahesh G.; Parkin, Stuart S. P.
• Is Part Of: Advanced materials. Volume 28:Issue 26(2016)
• Page Start: 5284
• Page End: 5292
• Publication Date: 2016-05-09
• Subjects: insulator‐to‐metal transition -- ionic‐liquid gating -- oxygen vacancies -- tungsten trioxide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201505631
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Reversible metallization of band and Mott insulators by ionic‐liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic‐to‐cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.