Layer Engineering of 2D Semiconductor Junctions. Issue 25 (2nd May 2016)

• Record Type: Journal Article
• Authors: He, Yongmin; Sobhani, Ali; Lei, Sidong; Zhang, Zhuhua; Gong, Yongji; Jin, Zehua; Zhou, Wu; Yang, Yingchao; Zhang, Yuan; Wang, Xifan; Yakobson, Boris; Vajtai, Robert; Halas, Naomi J.; Li, Bo; Xie, Erqing; Ajayan, Pulickel
• Is Part Of: Advanced materials. Volume 28:Issue 25(2016)
• Page Start: 5126
• Page End: 5132
• Publication Date: 2016-05-02
• Subjects: 2D semiconductor junctions -- layer engineering -- multilayer MoSe2 -- photovoltaic effects -- rectification effects; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201600278
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super‐thin‐layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.