Epitaxy of Layered Orthorhombic SnS–SnSxSe(1−x) Core–Shell Heterostructures with Anisotropic Photoresponse. (29th April 2016)

• Record Type: Journal Article
• Authors: Xia, Jing; Zhu, Dandan; Li, Xuanze; Wang, Lei; Tian, Lifeng; Li, Jing; Wang, Jingyuan; Huang, Xing; Meng, Xiang‐Min
• Is Part Of: Advanced functional materials. Volume 26:Number 26(2016)
• Page Start: 4673
• Page End: 4679
• Publication Date: 2016-04-29
• Subjects: anisotropic photoresponse -- core–shell heterostructure -- epitaxy -- physical vapor deposition -- van der Waals crystal; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201600699
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Vertical and in‐plane heterostructures based on van der Waals (vdW) crystals have drawn rapidly increasing attention owning to the extraordinary properties and significant application potential. However, current heterostructures are mainly limited to vdW crystals with a symmetrical hexagonal lattice, and the heterostructures made by asymmetric vdW crystals are rarely investigated at the moment. In this contribution, it is reported for the first time the synthesis of layered orthorhombic SnS–SnS x Se(1− x ) core–shell heterostructures with well‐defined geometry via a two‐step thermal evaporation method. Structural characterization reveals that the heterostructures of SnS–SnS x Se(1− x ) are in‐plane interconnected and vertically stacked, constructed by SnS x Se(1− x ) shell heteroepitaxially growing on/around the pre‐synthesized SnS flake with an epitaxial relationship of (303)SnS //(033)SnS x Se(1− x ), [010]SnS //[100]SnS x Se(1− x ) . On the basis of detailed morphology, structure and composition characterizations, a growth mechanism involving heteroepitaxial growth, atomic diffusion, as well as thermal thinning is proposed to illustrate the formation process of the heterostructures. In addition, a strong polarization‐dependent photoresponse is found on the device fabricated using the as‐prepared SnS−SnS x Se(1− x ) core–shell heterostructure, enabling the potential use of the heterostructures as functional components for optoelectronic devices featured with anisotropy. Abstract : Layered orthorhombic SnS–SnS x Se(1− x ) core–shell heterostructures are successfully synthesized via an epitaxial growth method. Due to the structural characteristic of the components, the heterostructures are able to show a strong polarization‐dependent photoresponse, which will facilitate developing novel functional optoelectronic devices beyond conventional materials.