Corrigendum to ''A Multilevel Memristor-CMOS memory cell as A ReRAM'' [Microelectron. J. 46 (2015) 1283–1290]. (August 2016)
- Record Type:
- Journal Article
- Title:
- Corrigendum to ''A Multilevel Memristor-CMOS memory cell as A ReRAM'' [Microelectron. J. 46 (2015) 1283–1290]. (August 2016)
- Main Title:
- Corrigendum to ''A Multilevel Memristor-CMOS memory cell as A ReRAM'' [Microelectron. J. 46 (2015) 1283–1290]
- Authors:
- Rabbani, Payam
Dehghani, Rasoul
Shahpari, Nima - Abstract:
- Is Part Of:
- Microelectronics journal. Volume 54(2016)
- Journal:
- Microelectronics journal
- Issue:
- Volume 54(2016)
- Issue Display:
- Volume 54, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 54
- Issue:
- 2016
- Issue Sort Value:
- 2016-0054-2016-0000
- Page Start:
- 166
- Page End:
- Publication Date:
- 2016-08
- Subjects:
- Microelectronics -- Periodicals
Microélectronique -- Périodiques
Microelectronics
Electronic journals
Journals - contents and abstracts
Periodicals
621.3805 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/5877621.html ↗
http://www.sciencedirect.com/science/journal/00262692 ↗
http://www.intute.ac.uk/sciences/cgi-bin/fullrecord.pl?handle=lesa.1012319367 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.mejo.2016.06.004 ↗
- Languages:
- English
- ISSNs:
- 0959-8324
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.973000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 1336.xml